IRFM3205 v gs gate ? source voltage i d continuous drain current* @ v gs = 10v , t c = 25c @ v gs = 10v , t c = 100c i dm pulsed drain current p d max. power dissipation @ t c = 25c linear derating factor i l avalanche current , clamped 1 dv / dt peak diode recovery 2 r jc thermal resistance junction ? case t j , t stg operating junction and storage temperature range t l lead temperature (1.6mm from case for 10s) 20v 35a 35a 140a 125w 1.0w / c 35a 2.6v / ns 1.0c / w ?55 to 150c 300c mechanical data dimensions in mm (inches) 123 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) 3.78 (0.149) dia. 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.81 (0.150) bsc 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) bsc to?254aa ? isolated metal package pin 1 ? drain pin 2 ? source pin 3 ? gate absolute maximum ratings (t c = 25 c unless otherwise stated) 1) repetative rating: pulse width limited by max. junction temperature. 2) i sd 35a , di/dt 230a / s , v dd bv dss , t j 150 c n?channel power mosfet features n?channel mosfet hermetic isolated to-254 package ceramic surface mount package option v dss 55v i d(cont) 35a r ds(on) 0.015 ? ? document number 5606 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
IRFM3205 parameter test conditions min. typ. max. unit v gs = 0 i d = 250 a reference to 25 c i d = 1ma v gs = 10v i d = 35a v ds = v gs i d = 250 a v ds 15v i ds = 35a v ds = 55v v gs = 0 v ds = 44v t j = 125 c v gs = 20v v gs = ? 20v v gs = 0 v ds = 25v f = 1mhz v gs = 10v i d = 35a v ds = 44v v dd = 28v i d = 35a r g = 2.5 ? v gs = 10v i s = 35a v gs = 0 i f = 35a t j = 25 c d i / d t 100a/ sv dd 25v electrical characteristics (t j = 25 c unless otherwise stated) drain ? source breakdown voltage temperature coefficient of breakdown voltage static drain ? source on ? state resistance 2 gate threshold voltage forward transconductance 2 zero gate voltage drain current forward gate ? source leakage reverse gate ? source leakage input capacitance output capacitance reverse transfer capacitance total gate charge gate ? source charge gate ? drain ( ? miller ? ) charge turn ? on delay time rise time turn ? off delay time fall time continuous source current (body pulse source current 1 diode forward voltage reverse recovery time3 reverse recovery charge3 forward turn ? on time 55 0.056 0.015 24 34 25 250 100 ? 100 3600 1200 445 170 32 74 22 80 70 55 35 140 1.3 130 410 negligible v v/ c ? v s ( ? a na pf nc ns a v ns nc bv dss ? bv dss ? t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr t on static electrical ratings dynamic characteristics source ? drain diode characteristics ( ? ) document number 5606 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
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